III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm

Autor: Richardson Stephen C., Woods Jonathan R. C., Daykin Jake, Gorecki Jon, Bek Roman, Klokkou Nicholas T., Wilkinson James S., Jetter Michael, Apostolopoulos Vasileios
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: EPJ Web of Conferences, Vol 266, p 01011 (2022)
Druh dokumentu: article
ISSN: 2100-014X
DOI: 10.1051/epjconf/202226601011
Popis: We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.
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