| Autor: |
A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 98-101 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1729-7648 |
| Popis: |
The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2- x Tex compounds are transforming into direct-gap compounds for x < 0,5 or x > 1,5. The band gap dependence has a linear behavior in the case when the concentration of Te atoms is smaller than the concentration of S atoms. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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