| Autor: |
Qihao Zhang, Yisong Shen, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 10, Pp 942-946 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2022.3214000 |
| Popis: |
In this letter, high-performance Al2O3/ $\beta$ -Ga2O3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated. The capacitance-voltage (C–V) curves of the Al2O3/ $\beta$ -Ga2O3 (001) MIS capacitor remain stable under different measurement frequencies. The leakage current density is lower than $2.0 \times 10^{-8}$ A/cm2 when the gate voltage is in the range of −5~13 V. The fixed charge and trapped charge densities in Al2O3 film are $4.4 \times 10^{12}$ and $6.0 \times 10^{11}$ cm−2, respectively. Average and minimum interface trapped charge density ( ${\mathrm {D}}_{it}$ ) for Al2O3/ $\beta$ -Ga2O3 (001) interface has been extracted to be as low as $3.3 \times 10^{11}$ and $2.3 \times 10^{11}$ cm−2 eV−1 via the Terman method, respectively. The low ${\mathrm {D}}_{it}$ is probably attributed to the modification of vacancy defects and the introduction of hydroxyl groups at the Al2O3/ $\beta$ -Ga2O3 (001) interface after piranha solution pretreatment for $\beta$ -Ga2O3. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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