Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
| Autor: | Zhou Lin, Smith David, Sablon KA, Wang Zh, Salamo GJ |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Nanoscale Research Letters, Vol 3, Iss 12, Pp 530-533 (2008) |
| Druh dokumentu: | article |
| ISSN: | 1931-7573 1556-276X |
| DOI: | 10.1007/s11671-008-9194-5 |
| Popis: | Abstract Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
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