| Autor: |
Jisung Park, Hanjong Paik, Kazuki Nomoto, Kiyoung Lee, Bo-Eun Park, Benjamin Grisafe, Li-Chen Wang, Sayeef Salahuddin, Suman Datta, Yongsung Kim, Debdeep Jena, Huili Grace Xing, Darrell G. Schlom |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 8, Iss 1, Pp 011110-011110-6 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/1.5133745 |
| Popis: |
We report a fully transparent thin-film transistor utilizing a La-doped BaSnO3 channel layer that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5 × 108. The La-doped BaSnO3 channel is grown on a 100–150 nm thick unintentionally doped BaSnO3 buffer layer on a (001) MgO substrate by molecular-beam epitaxy. Unpatterned channel layers show mobilities of 127–184 cm2 V−1 s−1 at carrier concentrations in the low to mid 1019 cm−3 range. The BaSnO3 is patterned by reactive ion etching under conditions preserving the high mobility and conductivity. Using this patterning method, a sub-micron-scale thin film transistor exhibiting complete depletion at room temperature is achieved. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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