Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact
| Autor: | Smyntyna V. A., Kulinich O. A., Yatsunskii I. R., Sviridova O. V., Marchuk I. A. |
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| Jazyk: | English<br />Russian |
| Rok vydání: | 2011 |
| Předmět: |
polycrystalline silicon
current transport Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| Zdroj: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 39-41 (2011) |
| Druh dokumentu: | article |
| ISSN: | 2225-5818 |
| Popis: | Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals. |
| Databáze: | Directory of Open Access Journals |
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