Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Autor: Wojciech Dawidowski, Beata Ściana, Katarzyna Bielak, Miroslav Mikolášek, Jakub Drobný, Jarosław Serafińczuk, Iván Lombardero, Damian Radziewicz, Wojciech Kijaszek, Arpád Kósa, Martin Florovič, Jaroslav Kováč, Carlos Algora, L’ubica Stuchlíková
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Energies, Vol 14, Iss 15, p 4651 (2021)
Druh dokumentu: article
ISSN: 1996-1073
DOI: 10.3390/en14154651
Popis: Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.
Databáze: Directory of Open Access Journals
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