Structural and D.C. conductivity investigation of the ternary alloy System a-AlXGa1-x As:H films prepared by new deposition method
| Autor: | H. Kh. Al- Lamy |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Iraqi Journal of Physics, Vol 9, Iss 16 (2011) |
| Druh dokumentu: | article |
| ISSN: | 2070-4003 2664-5548 |
| Popis: | In this paper Alx Ga1-x As:H films have been prepared by using new deposition method based on combination of flash- thermal evaporation technique. The thickness of our samples was about 300nm. The Al concentration was altered within the 0 x 40. The results of X- ray diffraction analysis (XRD) confirmed the amorphous structure of all AlXGa1-x As:H films with x 40 and annealing temperature (Ta) |
| Databáze: | Directory of Open Access Journals |
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