Thermoelectric Transport Properties of n-Type Sb-doped (Hf,Zr,Ti)NiSn Half-Heusler Alloys Prepared by Temperature-Regulated Melt Spinning and Spark Plasma Sintering

Autor: Ki Wook Bae, Jeong Yun Hwang, Sang-il Kim, Hyung Mo Jeong, Sunuk Kim, Jae-Hong Lim, Hyun-Sik Kim, Kyu Hyoung Lee
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Applied Sciences, Vol 10, Iss 14, p 4963 (2020)
Druh dokumentu: article
ISSN: 2076-3417
DOI: 10.3390/app10144963
Popis: Herein we report a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1−xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4 W m−1 K−1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01.
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