| Autor: |
Maarten van Es, Selman Tamer, Elin Bloem, Laurent Fillinger, Elfi van Zeijl, Klára Maturová, Jacques van der Donck, Rob Willekers, Adam Chuang, Diederik Maas |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Micro and Nano Engineering, Vol 19, Iss , Pp 100181- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2590-0072 |
| DOI: |
10.1016/j.mne.2023.100181 |
| Popis: |
Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution? No exposed nanometre-scale resist pattern is sufficiently sturdy to unalteredly withstand inspection by intense photon or electron beams, not even after processing and development.This paper presents experimental proof that infrared atomic force microscopy (IR-AFM) is sufficiently sensitive and gentle to chemically record vulnerable yet valuable lithographic patterns in a chemically amplified resist after exposure prior to development. Accordingly, IR-AFM metrology provides long-sought insights into changes in the chemical and spatial distribution per component in a latent resist image, both directly after exposure and during processing. With these to-be-gained understandings, a disruptive acceleration of resist design and processing is expected. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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