| Autor: |
Seong-Joo Han, Joon-Kyu Han, Gyeong-Jun Yun, Mun-Woo Lee, Ji-Man Yu, Yang-Kyu Choi |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-021-03994-2 |
| Popis: |
Abstract Although SRAM is a well-established type of volatile memory, data remanence has been observed at low temperature even for a power-off state, and thus it is vulnerable to a physical cold boot attack. To address this, an ultra-fast data sanitization method within 5 ns is demonstrated with physics-based simulations for avoidance of the cold boot attack to SRAM. Back-bias, which can control device parameters of CMOS, such as threshold voltage and leakage current, was utilized for the ultra-fast data sanitization. It is applicable to temporary erasing with data recoverability against a low-level attack as well as permanent erasing with data irrecoverability against a high-level attack. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
|
Nepřihlášeným uživatelům se plný text nezobrazuje |
K zobrazení výsledku je třeba se přihlásit.
|
