Evolution and recent advances in RF/microwave transistors

Autor:	Juin J. Liou, Frank Schwierz
Jazyk:	angličtina
Rok vydání:	2004
Předmět:	microwave devices RF devices heterostructures HEMT HBT frequency limits Telecommunication TK5101-6720 Information technology T58.5-58.64
Zdroj:	Journal of Telecommunications and Information Technology, Iss 1 (2004)
Druh dokumentu:	article
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2004.1.224
Popis:	Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/058c3ff5a77241b79eeac0be34f03592 Zobrazit plný text záznamu View record in DOAJ