Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

Autor: O. M. Hontaruk, O. V. Konoreva, М. V. Lytovchenko, E. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Jazyk: English<br />Russian<br />Ukrainian
Rok vydání: 2015
Předmět:
Zdroj: Âderna Fìzika ta Energetika, Vol 16, Iss 1, Pp 56-59 (2015)
Druh dokumentu: article
ISSN: 1818-331X
2074-0565
Popis: Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К). Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.
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