Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions
Autor: | O. M. Hontaruk, O. V. Konoreva, М. V. Lytovchenko, E. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk |
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Jazyk: | English<br />Russian<br />Ukrainian |
Rok vydání: | 2015 |
Předmět: | |
Zdroj: | Âderna Fìzika ta Energetika, Vol 16, Iss 1, Pp 56-59 (2015) |
Druh dokumentu: | article |
ISSN: | 1818-331X 2074-0565 |
Popis: | Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К). Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs. |
Databáze: | Directory of Open Access Journals |
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