| Autor: |
Li-Wen Su, Weiting Chen, Kiichiro Uchino, Yoshinobu Kawai |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 2, Pp 025316-025316-10 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5003911 |
| Popis: |
A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3+, SiH2+, SiH3- and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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