| Autor: |
E. A. Henriksen, D. Nandi, J. P. Eisenstein |
| Jazyk: |
angličtina |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Physical Review X, Vol 2, Iss 1, p 011004 (2012) |
| Druh dokumentu: |
article |
| ISSN: |
2160-3308 |
| DOI: |
10.1103/PhysRevX.2.011004 |
| Popis: |
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find both that the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau-level splittings due to a lifting of the valley degeneracy are clearly observed. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
