| Autor: |
S. Yuan, K. Omori, T. Yamaguchi, T. Ide, S. Muranaka, M. Inoue |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 12, Pp 407-414 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2024.3371455 |
| Popis: |
The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C+ is implanted at $3\times 10{^{{16}}}$ ions/cm2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C+ at $1\times 10{^{{16}}}$ ions/cm2 or Si+ to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst’s Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
