Using Recycled Tetrapak and Doped Titanyl/Vanadyl Phthalocyanine to Make Solid-State Devices
Autor: | María Elena Sánchez Vergara, Emiliano Toledo Dircio, Luis Alberto Cantera Cantera, Lourdes Bazán-Diaz, Roberto Salcedo |
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Jazyk: | angličtina |
Rok vydání: | 2024 |
Předmět: |
Tetrapak electrode
semiconductor film optical gap solid-state device electrical behavior Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
Zdroj: | Materials, Vol 17, Iss 2, p 309 (2024) |
Druh dokumentu: | article |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma17020309 |
Popis: | In this work we studied the semiconductor behavior of titanyl phthalocyanine (TiOPc) and vanadyl phthalocyanine (VOPc), doped with anthraflavic acid and deposited on Tetrapak/graphite as flexible electrodes. The molecular structure was approached using the density functional theory and astonishingly, it was found that the structure and electronic behavior can change depending on the metal in the phthalocyanine. Experimentally, the Root Mean Square was found to be 124 and 151 nm for the VOPc-Anthraflavine and TiOPc-Anthraflavine films, respectively, and the maximum stress was 8.58 MPa for the film with VOPc. The TiOPc-Anthraflavine film presents the smallest fundamental gap of 1.81 eV and 1.98 eV for indirect and direct transitions, respectively. Finally, the solid-state devices were fabricated, and the electrical properties were examined. The tests showed that the current–voltage curves of the devices on Tetrapak and VOPc-Anthraflavine on a rigid substrate exhibit the same current saturation behavior at 10 mA, which is achieved for different voltage values. Since the current–voltage curves of the TiOPc-Anthraflavine on a rigid substrate presents a defined diode model behavior, it was approximated by nonlinear least squares, and it has been determined that the threshold voltage of the sample for the different lighting conditions is between 0.6 and 0.8 volts. |
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