| Autor: |
Dongyeol Ju, Hyeonseung Ji, Jungwoo Lee, Sungjun Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
APL Materials, Vol 12, Iss 7, Pp 071121-071121-13 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/5.0211178 |
| Popis: |
The implementation of reservoir computing using resistive random-access memory as a physical reservoir has attracted attention due to its low training cost and high energy efficiency during parallel data processing. In this work, a NbOx/Al2O3-based memristor device was fabricated through a sputter and atomic layer deposition process to realize reservoir computing. The proposed device exhibits favorable resistive switching properties (>103 cycle endurance) and demonstrates short-term memory characteristics with current decay. Utilizing the controllability of the resistance state and its variability during cycle repetition, electrical pulses are applied to investigate the synapse-emulating properties of the device. The results showcase the functions of potentiation and depression, the coexistence of short-term and long-term plasticity, excitatory post-synaptic current, and spike-rate dependent plasticity. Building upon the functionalities of an artificial synapse, pulse spikes are categorized into three distinct neural firing patterns (normal, adapt, and boost) to implement 4-bit reservoir computing, enabling a significant distinction between “0” and “1.” |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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