| Autor: |
D. V. Krapukhin, P. P. Maltsev |
| Jazyk: |
ruština |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Российский технологический журнал, Vol 4, Iss 4, Pp 42-53 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2500-316X |
| DOI: |
10.32362/2500-316X-2016-4-4-42-53 |
| Popis: |
The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are based mainly on gallium arsenide. At the initial stage we developed test HEMT-transistors on the basis of which we created the transistor models - Fujii model and Pospieszalski model. On the basis of the developed models we designed an amplifier schematic circuit consisting of 4 cascades. Based on the schematic circuit, we designed a topology of a monolithic integrated circuit in the ADS CAD, and made a complete electrodynamic calculation of the topology, which showed reachability of the required characteristics in the frequency range 57-64 GHz. Conducted measurements of a manufactured sample showed the fulfillment requirements of the range and a good agreement with the calculations. One of the features of the technology of the developed amplifier is the step of forming of electrical connections - through holes, which provide a common grounding plane of the circuit. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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