| Autor: |
Keyuan Ding, Tianci Li, Bin Chen, Feng Rao |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Frontiers in Nanotechnology, Vol 3 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2673-3013 |
| DOI: |
10.3389/fnano.2021.649560 |
| Popis: |
Extending cycling endurance and suppressing programming noise of phase-change random-access memory (PCRAM) are the key challenges with respect to the development of nonvolatile working memory and high-accuracy neuromorphic computing devices. However, the large-scale atomic migration along electrical pulse direction in the unconstrained three-dimensional phase transitions of the phase-change materials (PCMs) induces big resistance fluctuations upon repeated programming and renders the classic PCRAM devices into premature failure with limited cycling endurance. Previous efforts of superlattice-like and superlattice PCM schemes cannot effectively resolve such issues. In this work, we demonstrated that, through fine-tuning the sputtering techniques, a phase-change heterostructure (PCH) of Sb2Te3/TiTe2 can be successfully constructed. In contrast to its superlattice-like counterpart with inferior crystal quality, the well-textured PCH architecture ensures the reliable (well-confined) two-dimensional phase transitions, promoting an ultralow-noise and long-life operation of the PCRAM devices. Our study thus provides a useful reference for better manufacturing the PCH architecture and further exploring the excellent device performances and other new physics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
