| Autor: |
Gem Shoute, Amir Afshar, Triratna Muneshwar, Kenneth Cadien, Douglas Barlage |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 7, Iss 1, Pp 1-5 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/ncomms10632 |
| Popis: |
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a barrier dielectric with a high-dielectric constant. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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