| Popis: |
The universal formulae for λ(χreal, Eg, T) and λ(χreal, Eg, T)p of insulator having less impurities are experimentally proved, where λ(χreal, Eg, T) is the mean escape depth at Kelvin temperature T of secondary electrons emitted from insulators with band gap Eg and efficient electron affinity χreal, λ(χreal, Eg, T)p is the λ(χreal, Eg, T) due to electron-lattice interaction. Based on the mechanism of electron-insulator interaction, experimental data, existing formulae, ESTAR program and formulae for λ(χreal, Eg, T) and λ(χreal, Eg, T)p of insulator having less impurities, the methods of obtaining λ(χreal, Eg, T)e-e, λ(χreal, Eg, T)e-defect and λ(χreal, Eg, T)i are presented, where λ(χreal, Eg, T)e-e is the λ(χreal, Eg, T) due to electron–electron interaction, λ(χreal, Eg, T)e-defect is the λ(χreal, Eg, T) due to electron–defect interaction, λ(χreal, Eg, T)i is the λ(χreal, Eg, T) due to electron-impurity interaction. The λ(χreal, Eg, T)p, λ(χreal, Eg, T)e-e, λ(χreal, Eg, T)e-defect and λ(χreal, Eg, T)i can provide corresponding information regarding electron-insulator interaction. Thus, it can be concluded that the method of investigating electron-insulator interaction by secondary electron emission SEE is successfully presented in this work. According to experimental data, formula for λ(χreal, Eg, T), ESTAR program, calculated parameters of primary range and existing formulae for SEE, the method of calculating the ẟ at different T and in the range of 1.0 keV ≤ Epo ≤ 100.0 keV from insulator having less impurities is successfully presented, where ẟ is secondary electron yield, Epo is incident energy of primary electron. |
