Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Autor: Zoltán Balogh-Michels, Igor Stevanovic, Aurelio Borzi, Andreas Bächli, Daniel Schachtler, Thomas Gischkat, Antonia Neels, Alexander Stuck, Roelene Botha
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Journal of the European Optical Society-Rapid Publications, Vol 17, Iss 1, Pp 1-8 (2021)
Druh dokumentu: article
ISSN: 1990-2573
DOI: 10.1186/s41476-021-00147-w
Popis: Abstract In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.
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