Electrically Active Defects in SiC Power MOSFETs

Autor: Mayank Chaturvedi, Daniel Haasmann, Hamid Amini Moghadam, Sima Dimitrijev
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: Energies, Vol 16, Iss 4, p 1771 (2023)
Druh dokumentu: article
ISSN: 16041771
1996-1073
DOI: 10.3390/en16041771
Popis: The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. Specifically, these defects impact the channel-carrier mobility and threshold voltage of SiC MOSFETs, depending on their physical location and energy levels. To characterize these defects, techniques have evolved from those used for Si devices to techniques exclusively designed for the SiC MOS structure and SiC MOSFETs. This paper reviews the electrically active defects at and near the interface between SiC and the gate dielectric in SiC power MOSFETs and MOS capacitors. First, the defects are classified according to their physical locations and energy positions into (1) interface traps, (2) near interface traps with energy levels aligned to the energy gap, and (3) near-interface traps with energy levels aligned to the conduction band of SiC. Then, representative published results are shown and discussed for each class of defect.
Databáze: Directory of Open Access Journals
Externí odkaz:
Nepřihlášeným uživatelům se plný text nezobrazuje