| Autor: |
So Hee Park, Min Young Kim, Hyeong Wook Kim, Changyong Oh, Hyeong Keun Lee, Bo Sung Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-023-40664-x |
| Popis: |
Abstract Top gate a-InGaZnO (IGZO) thin-film transistors (TFTs) annealed at high temperature show excellent initial current–voltage (I–V) characteristics. However, when they are exposed to positive gate bias for a long time, hump can occur in the subthreshold region. This abnormal hump is accelerated at a higher positive gate voltage and mitigate by a negative gate voltage. While the strength of the hump is irrelevant to a change in channel width, it relies significantly on channel length. This phenomenon might be due to mobile Na ions diffused from a glass substrate migrating toward the back and edge side of the IGZO semiconductor by a vertical gate electric field. When a layer of Al2O3 is formed between the IGZO semiconductor and the glass substrate, the hump phenomenon could be successfully solved by serving as a barrier for Na ions moving into the IGZO. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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