On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]

Autor:	Young Chel Kwun, Abaid ur Rehman Virk, Waqas Nazeer, M. A. Rehman, Shin Min Kang
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	molecular graph degree-based index silicon-carbon Mathematics QA1-939
Zdroj:	Symmetry, Vol 10, Iss 8, p 320 (2018)
Druh dokumentu:	article
ISSN:	2073-8994
DOI:	10.3390/sym10080320
Popis:	The application of graph theory in chemical and molecular structure research has far exceeded people’s expectations, and it has recently grown exponentially. In the molecular graph, atoms are represented by vertices and bonds by edges. Topological indices help us to predict many physico-chemical properties of the concerned molecular compound. In this article, we compute Generalized first and multiplicative Zagreb indices, the multiplicative version of the atomic bond connectivity index, and the Generalized multiplicative Geometric Arithmetic index for silicon-carbon Si2C3−I[p,q] and Si2C3−II[p,q] second.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/0269ae037d854b5390611364bd0b99d1 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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