Features of the electronic transport of topological semimetal PtSn4 and WTe2 single crystals

Autor: A. N. Perevalova, S. V. Naumov, S. M. Podgornykh, E. B. Marchenkova, V. V. Chistyakov, J. C. A. Huang, V. V. Marchenkov
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: AIP Advances, Vol 12, Iss 3, Pp 035225-035225-4 (2022)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/9.0000326
Popis: PtSn4 and WTe2 single crystals were grown, and the resistivity was studied in the temperature range from 4.2 to 80 K in various magnetic fields up to 10 T in detail. It is suggested that the observed quadratic temperature dependence of the electrical resistivity at low temperatures in zero field can be due to, in addition to electron-electron scattering, the “electron-phonon-surface” interference scattering mechanism. The transition from high effective magnetic fields to weak ones, which is observed in compensated conductors with a closed Fermi surface, was proposed as a possible explanation for the minimum on the temperature dependence of the resistivity of PtSn4 and WTe2 in a magnetic field. The values of the mean free path of current carriers were estimated in these materials.
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