Valence band engineering of GaAsBi for low noise avalanche photodiodes

Autor: Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-021-24966-0
Popis: An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs) avalanche photodiodes significantly reduces this excess noise.
Databáze: Directory of Open Access Journals