On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs
| Autor: | K. F. Yarn, W. C. Chien, C. S. Wang |
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| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Předmět: | |
| Zdroj: | Active and Passive Electronic Components, Vol 26, Iss 2, Pp 115-127 (2002) |
| Druh dokumentu: | article |
| ISSN: | 0882-7516 1563-5031 |
| DOI: | 10.1080/0882751031000073888 |
| Popis: | The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottky barrier effects are discussed in detail. In addition, the accelerated testing of the temperature-dependent effects on ID ,Gm and Schottky barrier are examined. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
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