A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

Autor: Anbang Zhang, Qi Zhou, Chao Yang, Yuanyuan Shi, Wanjun Chen, Zhaoji Li, Bo Zhang
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
DOI: 10.1186/s11671-019-2860-y
Popis: Abstract An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than − 0.152%/oC.
Databáze: Directory of Open Access Journals
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