| Autor: |
Dmitrii A. Vasil'ev, Dmitry A. Spassky, Shunsuke Kurosawa, Sergey I. Omelkov, Natalia V. Vasil'eva, Victor G. Plotnichenko, Andrey V. Khakhalin, Valery V. Voronov, Vladimir V. Kochurikhin |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Journal of Science: Advanced Materials and Devices, Vol 5, Iss 1, Pp 95-103 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2468-2179 |
| DOI: |
10.1016/j.jsamd.2020.01.005 |
| Popis: |
Се-doped (Pb,Gd)3(Al,Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy from four series of supercooled PbO–B2O3-based melt solutions on Gd3Ga5O12 and Gd3Al2.26Ga2.74O12 single crystal substrates. The optical and scintillation properties of the epitaxial garnet films were studied. The 5d-4f emission of Ce3+ ions within 450–650 nm was observed. The highest pulsed cathodoluminescence yield and scintillation yield values under 133Ba excitation for the Pb0.01Ce0.02Gd2.97Al3.13Ga1.87O12 film were 43,100 photons/MeV and 20,000 photons/MeV, respectively. The pulsed cathodoluminescence decay times of the film were 1.8 (1%), 24 (25%), and 60 ns (74%), and the scintillation decay times were 3.9 (7%) and 43.6 ns (93%). Because of the rapid decay and high light yield, Се-doped (Pb,Gd)3(Al,Ga)5O12 garnet films can be used in X-ray scintillators for different applications, such as homeland security. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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