Autor: |
Shengbo Gao, Mingyuan Ma, Bin Liang, Yuan Du, Li Du, Kunji Chen |
Jazyk: |
angličtina |
Rok vydání: |
2024 |
Předmět: |
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Zdroj: |
Nanomaterials, Vol 14, Iss 17, p 1412 (2024) |
Druh dokumentu: |
article |
ISSN: |
2079-4991 |
DOI: |
10.3390/nano14171412 |
Popis: |
As the key hardware of a brain-like chip based on a spiking neuron network (SNN), memristor has attracted more attention due to its similarity with biological neurons and synapses to deal with the audio signal. However, designing stable artificial neurons and synapse devices with a controllable switching pathway to form a hardware network is a challenge. For the first time, we report that artificial neurons and synapses based on multilayered HfOx/TiOy memristor crossbar arrays can be used for the SNN training of audio signals, which display the tunable threshold switching and memory switching characteristics. It is found that tunable volatile and nonvolatile switching from the multilayered HfOx/TiOy memristor is induced by the size-controlled atomic oxygen vacancy pathway, which depends on the atomic sublayer in the multilayered structure. The successful emulation of the biological neuron’s integrate-and-fire function can be achieved through the utilization of the tunable threshold switching characteristic. Based on the stable performance of the multilayered HfOx/TiOy neuron and synapse, we constructed a hardware SNN architecture for processing audio signals, which provides a base for the recognition of audio signals through the function of integration and firing. Our design of an atomic conductive pathway by using a multilayered TiOy/HfOx memristor supplies a new method for the construction of an artificial neuron and synapse in the same matrix, which can reduce the cost of integration in an AI chip. The implementation of synaptic functionalities by the hardware of SNNs paves the way for novel neuromorphic computing paradigms in the AI era. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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