| Autor: |
Lei Hu, Yi-Feng Sun, Jie Cheng, Xi Qin, Xin-Yi Yang, Song Wu, Ru-Fei Tang, Zhi Long, Ming-Xia Tang, Zheng-Quan Hu, Xing Zou, An-Rong Wang, Shi-Fa Wang, Yong Wei, Li-Li Liu, Xiao-Zhi Wu |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Results in Physics, Vol 52, Iss , Pp 106847- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2211-3797 |
| DOI: |
10.1016/j.rinp.2023.106847 |
| Popis: |
Two-dimensional (2D) semiconductors with intrinsic dipole show glorious prospects in the fields of nanoelectronics. Herein, the possible applications of single-layer GaInO3 in the realms of optoelectronics and piezoelectricity are investigated via the first-principles study. We find that single-layer GaInO3 exhibits a large vertical dipole moment and a direct bandgap (1.53 eV). Its transport mobility for electrons and holes both surpasses 2000 cm2·V−1·s−1. The effective separation of charge carriers for single-layer GaInO3 is confirmed by the strong inside electric field and the spatially isolated conduction band minimum (CBM) and valence band maximum (VBM). The allowed optical transition makes single-layer GaInO3 a hopeful candidate for optical absorbers and detectors. Finally, we also find that single-layer GaInO3 holds a prominently stronger out-of-plane piezoelectric effect than that of previous 2D materials and will play a big role in modern top-bottom gate technologies. In summary, this work proves that single-layer GaInO3 is a promising candidate for atomic-thick optoelectronic and piezoelectric devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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