Semimetallization induced Hall anomaly in doped polymers

Autor: Zean Guo, Jiawei Wang, Mengmeng Li, Yawei Lv, Nianduan Lu, Chong Bi, Yeliang Wang, Ling Li, Ming Liu
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Physical Review Research, Vol 6, Iss 4, p 043180 (2024)
Druh dokumentu: article
ISSN: 2643-1564
DOI: 10.1103/PhysRevResearch.6.043180
Popis: Hall anomaly related to deviations in Hall carrier concentrations have always been recognized as signs of charge incoherence in organic semiconductors, which lack ordered lattices. In this paper, we show that the Hall carrier concentration anomaly in doped polymers might be a result of semimetallization. Based on the observation of semimetal-like states, a dual-channel model, in which electrons and holes compensate the Hall voltages of each other, is employed to account for the anomaly. Observations of possible nonlinear Hall effect and temperature dependent Hall signs further support the origin of Hall anomaly from semimetal states.
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