Wetting-Layer-Assisted Synthesis of Inverted CdSe/PbSe Quantum Dots and their Photophysical and Photo-Electrical Properties
| Autor: | Sayevich, Vladimir, Kim, Whi Dong, Robinson, Zachary L., Kozlov, Oleg V., Livache, Clément, Ahn, Namyoung, Jung, Heeyoung, Klimov, Victor I. |
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| Rok vydání: | 2024 |
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| Druh dokumentu: | Working Paper |
| Popis: | Heterostructured quantum dots (QDs) based on narrow-gap PbSe and wide-gap CdSe have been studied with an eye on their prospective applications in near-infrared (NIR) light sources, photodetectors, and solar cells. The most common structural motif is a spherical QD comprising a PbSe core enclosed into a CdSe shell. However, the potential barrier created by the CdSe shell complicates extraction of band-edge charge carriers from the QD. Therefore, conventional PbSe/CdSe QDs are not suitable for applications in practical photoconversion devices. Here we report inverted CdSe/PbSe core/shell QDs that overcome this drawback. In these structures, both photocarriers (electron and hole) exhibit a significant degree of shell localization and are therefore free to move within the QD solid and be extracted into an external circuit. To create such QDs, we employ a novel synthetic method in which a thin, atomically controlled wetting layer is used to homogenize the surface of the CdSe core and thus promote directionally uniform growth of the PbSe shell. Unlike noninverted QDs, inverted core/shell structures exhibit highly efficient photocarrier transport, making them excellent candidates for applications in practical photoconversion including photovoltaics, photodetection, and photochemistry. Comment: Total 39 pages, including main text, supporting information (SI), 5 main figures and 6 SI figures |
| Databáze: | arXiv |
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