Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform
| Autor: | Fabrizi, Federico, Cegielski, Piotr J., Goudarzi, Saeed, Kurahashi, Naho, Runkel, Manuel, Kreusel, Cedric, Chmielak, Bartos, Suckow, Stephan, Riedl, Thomas, Anantharaman, Surendra B., Mohammadi, Maryam, Lemme, Max C. |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Silicon photonic integrated circuits (PICs) require cost-effective laser sources that can be monolithically integrated. The low cost and low-temperature solution processability of metal halide perovskites (MHPs) make them attractive alternatives to established III-V compound semiconductors for on-chip laser sources in PICs. Cesium lead bromide (CsPbBr$_3$) perovskites are emerging materials for green light-emitting diodes and lasers. To date, amplified spontaneous emission (ASE) at room temperature has been frequently achieved in CsPbBr$_3$ thin films, while reports on lasing are more limited. Here, we demonstrate a first-order grating distributed feedback (DFB) CsPbBr$_3$ thin-film laser operating at room temperature. Planar hot-pressed (PHP)-CsPbBr$_}$, with a low ASE threshold of 14.5 $\mu$Jcm$^{-2}$ under 0.3 nanosecond (ns) pump pulses, was monolithically integrated into a silicon nitride (Si$_3$N$_4$) waveguide platform via a compatible top-down patterning process. The first-order grating DFB PHP-CsPbBr$_3$ thin-film laser operated at 540 nm in the green spectral region, where III-V lasers have limitations, and exhibited a lasing threshold of 0.755 mJcm$^{-2}$ at room temperature. This work marks a significant step toward utilizing MHPs for on-chip green lasers in PICs for commercial applications. Comment: 21 pages |
| Databáze: | arXiv |
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