Quantized Hall conductivity in monolayer 1T^{\prime}-MoS_2
| Autor: | Nobahari, Mohammad Mortezaei, Roknabadi, Mahmood Rezaei |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We investigate the topological and transport properties of 1T^{\prime}-MoS{_2} exhibiting Rashba spin-splitting, focusing on spin-valley-resolved Hall conductivity, Berry curvature dynamics, and Nernst coefficient. Rashba spin-splitting leads to spin-polarized electronic states with distinct spin textures, offering potential applications in spintronic devices. The pseudo-spin texture of conduction and valence bands reveals eddy and junction-like patterns around Dirac points, with opposing orientations for spin-up and spin-down states. We analyze Berry curvature behavior near Dirac points for varying {\alpha} values, demonstrating local conservation of Berry curvature and topological phase transitions in 1T^{\prime}-MoS{_2}. When {\alpha<1}, the system exhibits the Quantum Spin Hall Insulator (QSHI) phase, characterized by dominant spin-resolved Hall conductivity, helical edge mode, and a non-trivial topological gap. For {\alpha>1}, a topological phase transition to the Band Insulator (BI) occurs, marked by the dominance of valley-resolved Hall conductivity, absence of the edge modes and reversed Berry curvature signs. Calculations of spin Nernst (SNC), valley Nernst (VNC), and total Nernst coefficients (TNC) further confirm the QSHI-to-BI phase transition under varying $\alpha$ and electric fields. These results provide comprehensive insights into the tunable topological properties of 1T^{\prime}-MoS{_2} and their implications for spintronic and valleytronic applications. Comment: 7 pages, 6 figures |
| Databáze: | arXiv |
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