| Autor: |
Defrance, Fabien, Beyer, Andrew D., Wheeler, Jordan, Sayers, Jack, Golwala, Sunil R. |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) in superconductive lumped-element resonators using parallel-plate capacitors (PPCs). The TLS noise results presented in this article for two recipes of a-Si:H improve on the best achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics. |
| Databáze: |
arXiv |
| Externí odkaz: |
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