| Autor: |
Chen, Si-Yuan, Chai, Zixuan, Yu, Chenzheng, Graf, Anton M., Keski-Rahkonen, Joonas, Heller, Eric J. |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
In 1958, Anderson proposed a new insulating mechanism in random lattices, now known as Anderson localization. It has been shown that a metal-insulating transition occurs in three dimensions, and that one-dimensional disordered systems can be solved exactly to show strong localization regardless of the strength of disorders. Meanwhile, the two-dimensional case was known to be localizing from a scaling argument. Here, we report that there exists a mobility edge in certain random potentials which separate the extended-like states from short-ranged localized states. We further observe that the location of the mobility edge depends on the typical wavelength of the potential, and that the localization length are are related to the energy of an eigenstate. Finally, we apply a renormalization group theory to explain the localization effects and the existence of mobility edge and propose an experimental scheme to verify the mobility edge in photonic crystals. |
| Databáze: |
arXiv |
| Externí odkaz: |
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