Angstrom Scale Ionic Memristors' Engineering with van der Waals Materials- A Route to Highly Tunable Memory States
| Autor: | Biswabhusan, Dhal, Animesh, Puzari, Yeh, Li-Hsien, Gopinadhan, Kalon |
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| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | ACS Appl. Mater. Interfaces 2024, XXXX, XXX, XXX-XXX |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/acsami.4c14521 |
| Popis: | Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite, result in highly confined channels of size 3-5 {\AA}. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the over-screening of counter-ions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion-ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices. Comment: 20 pages, 15 figures |
| Databáze: | arXiv |
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