Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Autor:	Faustmann, Anton, Liebisch, Patrick, Bennemann, Benjamin, Perla, Pujitha, Lepsa, Mihail Ion, Pawlis, Alexander, Grützmacher, Detlev, Knoch, Joachim, Schäpers, Thomas
Rok vydání:	2024
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade. Comment: 7 pages main manuscript, 5 pages supplementary material, 6 figures in main manuscript, 6 supplementary figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2411.19575 Zobrazit plný text záznamu View this record from Arxiv