Spectroscopic Signature of Local Alloy Fluctuations in InGaN/GaN Multi-Quantum-Disk Light Emitting Diode Heterostructures and Its Impact on the Optical Performance

Autor: Chatterjee, Soumyadip, Sahu, Subhranshu Sekhar, Rana, Kanchan Singh, Bhunia, Swagata, Saha, Dipankar, Laha, Apurba
Rok vydání: 2024
Předmět:
Druh dokumentu: Working Paper
Popis: Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) under different process conditions. A temperature-dependent study of the luminescence peak positions reveals that samples prepared under certain process conditions exhibit a thermal distribution of carriers from the localized states that show the typical S-shaped dependence in luminescence characteristics. The absence of an S-shaped nature in the other sample prepared with relatively higher In-flux infers a superior homogeneity in alloy composition. Further investigation manifested superior optical properties for the samples where the S-shape nature is found to be absent.
Databáze: arXiv