| Autor: |
He, Yunfei, Moore, David C., Wang, Yubo, Ware, Spencer, Ma, Sizhe, Pradhan, Dhiren K., Hu, Zekun, Du, Xingyu, Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Ferroelectric (FE)-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we fabricated and characterized metal ferroelectric semiconductor capacitors integrating Aluminum Scandium Nitride onto Silicon Carbide, a prospective high temperature semiconductor for logic operations in extreme environments. The resultant Ni/Al0.68Sc0.32N/4H-SiC structure was evaluated for non-volatile memory performance from room temperature to high-temperature conditions. The 30-nm thick Al0.68Sc0.32N/SiC-based ferroelectric capacitors demonstrated ferroelectric switching at 900 C. The coercive field of the FE layer decreased linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800 C. Using positive-up negative-down measurements, we characterized the temperature dependence of remanent polarization. At 600 C, the devices achieved remarkable reliability, demonstrating endurance of ~2000 cycles and retention exceeding 100 hours with negligible polarization loss. Further reliability measurements extended to 800 C with 10,000 secs retention and > 300 endurance cycles, establish these devices as promising candidates for high-temperature memory applications. |
| Databáze: |
arXiv |
| Externí odkaz: |
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