| Autor: |
Xiao, Zhentao, Huang, Haimeng, Zhang, Zonghao, Wang, Chenxing |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
This paper presents a comprehensive study on aspect-ratio dependent optimization for specific on-resistance of three-dimensional high-k superjunction MOSFETs. The research introduces a Taylor modeling method, overcoming the computational limitations of the Bessel method. It also employs the Chynoweth model for more accurate breakdown voltage determination. The study provides a comparative analysis of four different superjunction structures, across five aspects: electric field, impact ionization integral, aspect ratio dependent optimization, charge imbalance effect and temperature. The findings offer valuable insights for the manufacturing guidance of superjunction structure selection |
| Databáze: |
arXiv |
| Externí odkaz: |
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