Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy
| Autor: | Yu, Jia, Zhou, Yuchen, Wang, Xiao, Ma, Xuejian, Dodabalapur, Ananth, Lai, Keji |
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| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | ACS Appl. Electron. Mater. 2024 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/acsaelm.4c01652 |
| Popis: | The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve steady-state or transient measurements on field-effect transistors. Here, we employed microwave impedance microscopy to carry out position-dependent time-of-flight (TOF) experiments on a-IGZO devices, which offer spatial and temporal information of the underlying transport dynamics. The drift mobility calculated from the delay time between carrier injection and onset of TOF response is 2 - 3 cm2/Vs, consistent with the field-effect mobility from device measurements. The spatiotemporal conductivity data can be nicely fitted to a two-step function, corresponding to two coexisting mechanisms with a typical timescale of milliseconds. The competition between multiple-trap-and-release conduction through band-tail states and hopping conduction through deep trap states is evident from the fitting parameters. The underlying length scale and time scale of charge dynamics in a-IGZO are of fundamental importance for transparent and flexible nanoelectronics and optoelectronics, as well as emerging back-end-of-line applications. Comment: 15 pages, 5 figures |
| Databáze: | arXiv |
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