Renormalization of the optical band gap in massive Dirac-like systems
| Autor: | Bezerra, Nilberto, Alves, Van Sérgio, Nascimento, Leandro O., Fernández, Luis |
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| Rok vydání: | 2024 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We calculate the mass renormalization for massive Dirac-like systems in (2+1)D due to the electron-phonon interaction at finite temperatures within the large-$N$ expansion. Our model combines the low-energy limit of charge carriers in a buckled honeycomb lattice with the low-energy approximation for phonons and the electron-phonon interaction in a two-dimensional material. Hence, we obtain a massive Dirac-like field interacting with a two-component vector field $\mathcal{A}_i$, describing the phonon field. This provides a one-loop electron self-energy at finite temperature and, from this, we calculate the renormalized band gap $m_R$. Thereafter, our effective model is applied for describing the renormalized optical band gap in monolayers of transition metal dichalcogenides (TMDs), such as MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, where a good agreement is found for reasonable values of our ultraviolet cutoff $\Lambda\approx 1$ eV. The main result establishes that, at low temperatures, $m_R$ is almost constant while for higher temperatures it is a decreasing linear function of the temperature $T$. We obtain that $m_R$ decreases about $\approx [0.1,0.2]$ eV whenever we increase the temperature from $\approx 4$ K to $500$ K, which is consistent with recent experimental measurements. We also estimate the temperature at which we should observe the transition to the linear regime and obtain typical values in the interval $\approx[110,150]$ K from the four materials we have considered. Comment: 11 pages, 5 figures |
| Databáze: | arXiv |
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