Experimental detection of topological electronic state and large linear magnetoresistance in $SrSn_{4}$ superconductor
| Autor: | Pariari, Arnab Kumar, Sharma, Rajesh O, Balal, Mohammad, Hücker, Markus, Das, Tanmoy, Barman, Sudipta Roy |
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| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Adv. Funct. Mater. 2024, 2412515 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1002/adfm.202412515 |
| Popis: | While recent experiments confirm the existence of hundreds of topological electronic materials, only a few exhibit the coexistence of superconductivity and a topological electronic state. These compounds attract significant attention in forefront research because of the potential for the existence of topological superconductivity, paving the way for future technological advancements. $SrSn_{4}$ is known for exhibiting unusual superconductivity below the transition temperature ($T_{C}$) of 4.8 K. Recent theory predicts a topological electronic state in this compound, which is yet to be confirmed by experiments. Systematic and detailed studies of the magnetotransport properties of $SrSn_{4}$ and its Fermi surface characterizations are also absent. For the first time, a quantum oscillation study reveals a nontrivial $\pi$ Berry phase, very light effective mass, and high quantum mobility of charge carriers in $SrSn_{4}$. Magnetotransport experiment unveils large linear transverse magnetoresistance (TMR) of more than 1200% at 5 K and 14 T. Angle-dependent transport experiments detect anisotropic and four-fold symmetric TMR, with the maximum value ($\sim$ 2000%) occurring when the angle between the magnetic field and the crystallographic b-axis is 45 degree. Our results suggest that $SrSn_{4}$ is the first topological material with superconductivity above the boiling point of helium that displays such high magnetoresistance. Comment: Advanced Functional Materials, Published online on 10th October,2024 |
| Databáze: | arXiv |
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