| Autor: |
Kang, Jingxuan, Ruiz, Mikel Gómez, Van Dinh, Duc, Campbell, Aidan F, John, Philipp, Auzelle, Thomas, Trampert, Achim, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz |
| Rok vydání: |
2024 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass spectrometry, and cathodoluminescence as well as photoluminescence spectroscopy. We demonstrate low degrees of strain relaxation (10% for $x=0.12$), low threading dislocation densities ($\mathrm{1\times10^{9}\,cm^{-2}}$ for $x=0.12$), uniform composition both in the growth and lateral direction, and a narrow emission band. The unique sum of excellent materials properties make these layers an attractive basis for the top-down fabrication of ternary nanowires. |
| Databáze: |
arXiv |
| Externí odkaz: |
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