| Autor: |
Yan, Yuchao, Liu, Yingying, Wang, Ziyi, Liu, Da, Gao, Xu, Wang, Yan, Li, Cheng, Ma, KeKe, Xia, Ning, Jin, Zhu, Deng, Tianqi, Zhang, Hui, Yang, Deren |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Grain boundaries have extensive influence on the performance of crystal materials. However, the atomic-scale structure and its relation with local and crystallographic symmetries remain elusive in low-symmetry crystals. Herein, we find that the local pseudo-mirror-symmetric atomic layer is the common physical origin of a series of highly coherent grain boundaries in the low-symmetry $\beta$-Ga2O3 crystal. These include the (100) twin boundary and an emerging series of $(h-1'0'2)/(h+1'0'\bar{2})$ coherent asymmetric grain boundaries (CAGBs). Owing to the local pseudo-mirror symmetry and the special geometric relation of the $\beta$-Ga2O3 conventional cell, these CAGBs place 80% of the boundary atoms in pseudo-coincident sites, exhibiting high coherence under the coincident-site lattice model. With a combination of density functional theory calculations, Czochralski growth experiment, and atomic-scale characterizations, the structure and stability of the $(002)/(20\bar{2})$-A CAGB are confirmed, with a boundary energy density as low as 0.36 J/m2. This CAGB is responsible for the spontaneous formation of a twinned defect facet at the surface steps during the epitaxy growth of $\beta$-Ga2O3, warranting a substrate orientation selection rule for $\beta$-Ga2O3. Through this study, we provide insights into the grain boundary physics in the low-symmetry $\beta$-Ga2O3 crystal while emphasizing the importance of the local pseudo-symmetries in the low-symmetry crystals. |
| Databáze: |
arXiv |
| Externí odkaz: |
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