| Autor: |
Wang, Ning, Wang, Shao-Min, Zhang, Run-Ze, Kang, Jia-Min, Lu, Wen-Long, Li, Hai-Ou, Cao, Gang, Wang, Bao-Chuan, Guo, Guo-Ping |
| Rok vydání: |
2024 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit Controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with a fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise. |
| Databáze: |
arXiv |
| Externí odkaz: |
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